Chinese translation for "oxygen vacancy"
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- 氧缺位
Related Translations:
- Example Sentences:
| 1. | On the other hand , oxygen plasma treatment makes ito film oxidized further , which decreases the number of oxygen vacancy and sn ~ ( 4 + )
另一方面,氧等离子体处理使ito薄膜表面的富sn氧化物进一步氧化,形成稳定的sno ,减少了ito薄膜表面的氧空位和sn ~ ( 4 + )数量,使其功函数增大。 | | 2. | Compared with pl of pure nanotube , the emission peak energy shift value was larger . this may result from the formation of oxygen vacancies in the nanotube during the process of surface - modification
( 2 )使用十六醇对纳米管钛酸进行了化学修饰，结果表明纳米管表面与十六醇发生酯化反应。 | | 3. | The subst - itutional oxygen vacancies and tin contributing to its high conductivity . the high optical transmittance of ito films is a direct consequence of it being a wide band gap ( eg > 3ev )
Ito结构中的氧空位和锡掺杂使得它具有很强的导电性，较大的能带间隙宽度( e _ g 3ev )使得它具有很强的光透明性。 | | 4. | The uv - visible absorption spectrum showed the as - prepared aam templates were transparent within visible light , and the pl curve showed the as - prepared aam templates had a blue pl band in wavelength range of 400nm ~ 60qnm which originated from singly ionized oxygen vacancies
从光致发光特性曲线发现，纳米孔阵列aam在400一600nm之间有一个蓝色发光带，该发光带来源于单离子氧空位。 | | 5. | In the discussion of visible luminescence mechanism , in order to prove that the oxygen vacancies or defects distribute on the surface of nanocrystallites , we presented to prepare the zno thin films with doped mn and studied the photoluminescence of zno : mn
在可见发光机制探讨中，为了证明氧空位或缺陷是分布在纳米晶表面，我们提出氧化锌中掺杂锰（ zno ： mn ） ，研究了zno ： mn薄膜的光致发光（ pl ） 。 | | 6. | It was found from the experiment that , with the increasing of substrate temperature , there were more oxygen vacancies in the films , which lead the conductance of the sample become larger , and the absorb edge of zno thin films shifted toward higher wavelength ; with increasing of ar : o2 ratio , there were lesser oxygen vacancies in the films , which lead the absorb edge of zno thin films shifted toward lower wavelength
实验还发现，随着衬底温度的升高，薄膜中产生的氧空位将会增多，使得zno薄膜的电导逐渐增大，而且其紫外透射吸收截止边带向高波长方向漂移；随着氩氧比例的增加，薄膜中的氧缺陷相对减少，薄膜的透射吸收截止边向低波长方向漂移。 | | 7. | It was found from the experiment that , with the increasing of substrate temperature , there were more oxygen vacancies in the films , which lead the conductance of the sample become larger , and the absorb edge of ito thin films shifted toward lower wavelength ; with increasing of ar : o2 ratio , there were lesser oxygen vacancies in the films , which lead the absorb edge of ito thin films shifted toward lower wavelength
实验还发现，在一定的温度范围内随着衬底温度的升高，薄膜中产生的氧空位将会增多，使得ito薄膜的电导逐渐增大，而且其紫外透射吸收截止边带向短波长方向漂移；随着氩氧比例的增加，薄膜中的氧缺陷相对减少，薄膜的透射吸收截止边向低波长方向漂移。 | | 8. | The magnitude of the conductivity maximum increases and shifts to lower temperature with increasing sr content . in this paper , the electrical conductivity reaches maximum value at x = 0 . 4 . below the temperature corresponding to the maximum value , the electrical conductivity is found to follow the relationship for the small polaron hopping mechanism , charge compensation of oxygen vacancy dominates electrical conduction at high temperature , and oxygen vacancy acts as traps to catch carriers , resulting in the decrease of carriers concentration and mobility
通过电学和热学性能测试结果表明，电导率随着sr含量的增加以及温度的变化都出现了极大值，在本论文中，在sr含量为0 . 4时电导率值最大，电导率最大值对应的温度随着sr含量的增加而降低，这是由于在低温下以小极化子导电机理为主，在高温阶段则是氧空位的电荷补偿占据主导作用，氧空位使得载流子的浓度和可动性减弱，从而导致电导率降低。 | | 9. | With the increase of the amount of al , the intensity of the pl peak at 510nm increases . with the aid of ple we can suggest that pl peak at 370nm and 410nm are related to the oxygen vacancies , and 510nm peak originate from a complex co - function of al , si , and o . el devices have been fabricated on three types of silicon based oxide films ( ge - sio2 films , si - sio2 films , and al - sio2 films )
用不同的方法制备的51一5102薄膜、 ge一510 :薄膜和al一51一5102薄膜，在较低的电压万均观察到了室温可见电致发光现象，峰位都在510nm左右，其峰位不因薄膜样品内所含颗粒的种类、薄膜的制备方法、偏压及后处理的影响，表明电致发光主要来源于电子和空穴在510 、基质中的发光中心的辐射复合发光。 | | 10. | By examining the vacancy formation energy of three kinds of defect sno _ 2 ( 110 ) surface , the most energetically favorable defect surface is that the surface possesses the coexistence of bridging and in - plane oxygen vacancies , which is different with the traditional defect model by only removing bridging oxygen
通过考察形成三种不同类型sno _ 2 ( 110 )缺陷表面的缺陷形成能,结果表明,形成同时具有桥氧和面氧缺陷的构型能量上最为有利,这与通常所认为的桥氧缺陷最为稳定不同。 |
- Similar Words：
- "oxygen uptake rate" Chinese translation, "oxygen utilization" Chinese translation, "oxygen utilization coefficient" Chinese translation, "oxygen utilization quotient" Chinese translation, "oxygen utilization ratio" Chinese translation, "oxygen valence" Chinese translation, "oxygen value" Chinese translation, "oxygen valve" Chinese translation, "oxygen vent line" Chinese translation, "oxygen walker" Chinese translation
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